Trap states are localized energy levels within the bandgap of semiconductor materials that can capture and hold charge carriers like electrons or holes for varying lengths of time. These states can arise from imperfections in the material structure, such as defects or impurities, and they significantly influence the optical and electronic properties of quantum dots, particularly in core-shell structures. Understanding trap states is essential for improving the performance of quantum dots in applications like photovoltaics and light-emitting devices.
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